Publications
FY2015
Conferences
International conference
| 52 | A. Kurenkov, C. Zhang, S. Fukami, S. DuttaGupta, and H. Ohno Dot size dependence of magnetization switching by spin-orbit torque in antiferromagnet/ferromagnet structures The 63rd JSAP Spring Meeting,2016, Tokyo, Japan, March 22, 2016. |
| 51 | TU Yuan、B. Han、Y. Shimizu、K. Inoue、M. Yano、Y. Chiba、T. Tanii、T. Shinada、Y. Nagai “Distribution of Single-Ion Implanted Dopants in Silicon Investigated by Atom Probe Tomography”, The 63rd JSAP Spring Meeting, Tokyo, Japan, March 20, 2016. |
| 50 | T. Nakano, M. Oogane, T. Furuichi, Kenichi Ao, and Yasuo Ando “Wide-dynamic-range magnetic sensor based on magnetic tunnel junction with perpendicularly magnetized [Co/Pd]-based reference layer”, The 63rd JSAP Spring Meeting, Tokyo, Japan, March 20, 2016. |
| 49 | K. Watanabe, H. Sato, S. Fukami, F. Matsukura, and H. Ohno, “Dependence of Magnetic Properties of CoFeB-MgO on Buffer Layer Materials”, 13th Joint MMM-Intermag Conference, San Diego, USA, January 15, 2016. |
| 48 | H. Honjo, H. Sato, S. Ikeda, S. Sato, T. Watanebe, S. Miura, T. Nasuno, Y. Noguchi, M.Yasuhira, T.Tanigawa, H.Koike, M.Muraguchi, M.Niwa, K.Ito, H.Ohno and T.Endoh, “Optimum boron concentration difference between single and double CoFeB/MgO interface perpendicular MTJs with high thermal tolerance and its mechanism”, 13th Joint MMM-Intermag Conference, San Diego, USA, January 14, 2016. |
| 47 | S. Ishikawa, H. Sato, S. Fukami, F. Matsukura, and H. Ohno, “Current induced magnetization switching of CoFeB/Ta/[Co/Pd (Pt)]-multilayer in magnetic tunnel junctions with perpendicular anisotropy ”, 13th Joint MMM-Intermag Conference, San Diego, USA, January 13, 2016. |
| 46 | S. Ohuchida, M. Murauchi, K. Itoh and T. Endoh, “Increase of Critical Switching Current Density of 10 nm p-MTJ in 4F2 Cell Array Due to Inter-cell Interference Phenomenon”, 13th Joint MMM-Intermag Conference, San Diego､USA, January 12, 2016. |
| 45 | T. Nakano, M. Oogane, T. Yano, K. Ao, H. Naganuma, and Y. Ando, “Magnetic sensor based on magnetic tunnel junctions with in-plane magnetized CoFeB sensing layer and out-of-plane magnetized [Co/Pd]-based reference layer”, 13th Joint MMM-Intermag Conference, San Diego､USA, January 12, 2016. |
| 44 | T. Anekawa, C. Zhang, S. Fukami, and H. Ohno, “A three-terminal spin-orbit torque device with a new configuration”, 13th RIEC International Workshop on Spintronics, Sendai, Japan, November 19, 2015. |
| 43 | K. Watanabe, H. Sato, S. Fukami, F. Matsukura, and H. Ohno, “Layer Thicknesses and Annealing Condition Dependence of Magnetic Properties of CoFeB-MgO Structure”, 13th RIEC International Workshop on Spintronics, Sendai, Japan, November 19, 2015. |
| 42 | E. C. I. Enobio, H. Sato, S. Fukami, F. Matsukura, and H. Ohno, “CoFeB thickness dependence of damping constant for single and double CoFeB-MgO interface structures,” 13th RIEC International Workshop on Spintronics, Sendai, Japan, November 19, 2015. |
| 41 | S. DuttaGupta, S. Fukami, C. Zhang, H. Sato, M. Yamanouchi, F. Matsukura, and H. Ohno, “Different universality classes for current and field driven domain wall creep in a magnetic metal”, 13th RIEC International Workshop on Spintronics, Sendai, Japan, November 19, 2015. |
| 40 | C. Zhang, S. Fukami, H. Sato, F. Matsukura, and H. Ohno, “Magnetization switching via Spin-orbit torque in nano-scale Ta/CoFeB/MgO”, 13th RIEC International Workshop on Spintronics, Sendai, Japan, November 19, 2015. |
| 39 | T. Nakano, M. Oogane, T. Furuichi, K. Ao, H. Naganuma and Y. Ando, “Effect of Co/Ta insertion layer in magnetic tunnel junctions with [Co/Pd]-based reference layer for magnetic sensor”, 13th RIEC International Workshop on Spintronics, Sendai, Japan, November 19, 2015. |
| 38 | H. Kageshima, K. Shiraishi, and T. Endoh, “Extension of Silicon Emission Model for Silicon Pillar Oxidation”, 2015 International Workshop on Dielectric Thin Films for Future Electron Devices Science and Technology(2015IWDTF), Tokyo, Japan, November 4, 2015. |
| 37 | K. Tsubomi, M. Muraguchi and T. Endoh, “Novel Current Collapse Mode Induced by Source Leakage Current in AlGaN/GaN HEMTs “, 2015 International Workshop on Dielectric Thin Films for Future Electron Devices Science and Technology(2015IWDTF), Tokyo, Japan, November 3, 2015. |
| 36 | S. Sato, K. Yamabe, T. Endoh and M. Niwa, “Failure Analysis of a SiC MOS Capacitor with a Poly-Si Gate Electrode”, 16 th International Conference on Silicon Carbide and Related Materials (ICSCRM 2015) , Giardini Naxos, Italy, October 8, 2015. |
| 35 | S. Ohuchida, K. Itoh, M. Muraguchi, T. Endoh, “10nm p-MTJ array design for suppressing switching delay induced by interference due to magnetic dipole interaction for high density STT-MRAM”, 2015 International Conference on Solid State Devices and Materials (2015 SSDM), Sapporo, Japan, September 29, 2015. |
| 34 | S. Kawachi, H. Shirakawa, M. Araidai, H. Kageshima, T. Endoh and K. Shiraishi, “First-Principles Study on Hydrogen Annealing Effect in Si/SiO2 Interface by Thermal Oxidation”, 2015 International Conference on Solid State Devices and Materials (2015 SSDM), Sapporo, Japan, September 29, 2015. |
| 33 | M. Muraguchi and T. Endoh, “Novel Design of Electrostatic Lens Potential for Improving Bending Curvature and Transmission Probability of Drive Current for Vertical Body Channel MOSFET”, 2015 International Conference on Solid State Devices and Materials (2015 SSDM), Sapporo, Japan, September 29, 2015. |
| 32 | J.H. Jeong and T. Endoh, “Universal Damage Recovery Scheme using the Oxygen Showering Post-treatment (OSP) Process for Sub-20nm High Density STT-MRAM Devices”, 2015 International Conference on Solid State Devices and Materials (2015 SSDM), Sapporo, Japan, September 29, 2015. |
| 31 | K. Mukaiyama, H. Naganuma, T. Yu, H. Kubota, A. Fukushima, M. Oogane and Y. Ando, “Millimeter-Wave Detector Using Magnetic Tunnel Junctions With Perpendicularly Magnetized L10-Ordered FePd Free Layer”, 2015 International Conference on Solid State Devices and Materials (2015 SSDM), Sapporo, Japan, September 29, 2015. |
| 30 | D. Kato, M. Oogane, K. Fujiwara, J. Jouno, H. Naganuma, H. Katsurada and Y. Ando, “Highly Sensitive Magnetic Field Sensor Devices Based on Magnetic Tunnel Junctions with CoFeSiB Electrode “, 2015 International Conference on Solid State Devices and Materials (2015 SSDM), Sapporo, Japan, September 29, 2015. |
| 29 | Y. Ma, S. Miura, H. Honjo, S. Ikeda, T. Hanyu, H. Ohno, T. Shibata and T. Endoh, “A 600-μW Ultra-Low-Power Associative Processor for Image Pattern Recognition Employing Magnetic Tunnel Junction (MTJ) Based Nonvolatile Memories with Novel Intelligent Power-Gating (IPG) Scheme”, 2015 International Conference on Solid State Devices and Materials (2015 SSDM), Sapporo, Japan, September 29, 2015. |
| 28 | S. Sato, H. Honjo, S. Ikeda, H. Ohno, T. Endoh, and M. Niwa, "Optimization of CoFeB Capping Layer Thickness for Characterization of Leakage Spot in MgO Tunneling Barrier of Magnetic Tunnel Junction", 2015 International Conference on Solid State Devices and Materials (2015 SSDM), Sapporo, Japan, September 29, 2015. |
| 27 | D. Suzuki and T. Hanyu, “Design of an MTJ-Based Nonvolatile Lookup Table Circuit Using an Energy-Efficient Single-Ended Logic-In-Memory Structure”, 2015 IEEE 58th International Midwest Symposium on Circuits and Systems (MWSCAS2015) , Colorado, USA, August 3, 2015. |
| 26 | N. Ohshima, S. Kubota, H. Sato, S. Fukami, F. Matsukura, and H. Ohno,
“Junction size dependence of switching current in CoFeB-MgO magnetic tunnel junctions with perpendicular easy axis”, The 34th Electronic Materials Symposium(EMS 34), Moriyama-shi, Shiga, Japan, July 17, 2015. |
| 25 | T. Iwabuchi, S. Fukami, and H. Ohno, “Width dependence of threshold current density for domain wall motion in Co/Ni wire”, The 34th Electronic Materials Symposium(EMS 34), Moriyama-shi, Shiga, Japan, July 17, 2015. |
| 24 | Y. Takeuchi, E. C. I. Enobio, H. Sato, S. Fukami, F. Matsukura, and H. Ohno, “Temperature dependence of intrinsic critical current of CoFeB-MgO magnetic tunnel junctions with perpendicular easy axis”, 22nd International Colloquium on Magnetic Films and Surfaces (ICMFS), Crakow, Poland, July 13, 2015. |
| 23 | C. Zhang, S. Fukami, H. Sato, F. Matsukura, and H. Ohno, "Spin-orbit torque induced magnetization switching in Ta/CoFeB/MgO heterostructure with a diameter down to 30 nm", 20th International Conference on Magnetism (ICM2015), Barcelona, Spain, July 6, 2015. |
| 22 | S. Fukami, C. Zhang, S. DuttaGupta, H. Ohno, “Spin-orbit torque switching in a ferromagnet/antiferromagnet bilayer system”, 20th International Conference on Magnetism (ICM2015), Barcelona, Spain, July 6, 2015. |
| 21 | E. C. I. Enobio, H. Sato, S. Fukami, F. Matsukura and H. Ohno, “Vector Network Analyer - Ferromagnetic Resonance Measurements on CoFeB-MgO stack with Perpendicular easy axis”, 8th International Conference on Materials for Advanced Technologies of the Material Research Society of Singapore (ICMAT2015), Singapore, June 30, 2015. |
| 20 | S. Sato, Y. Hiroi, K. Yamabe, M. Kitabatake, T. Endoh and M. Niwa, “Effect of Series Resistance on Dielectric Breakdown Phenomenon of Silicon Carbide MOS Capacitor”, 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2015), Hshinchu, Republic of China, June 30, 2015. |
| 19 | Y. Ma and T. Endoh, “A Novel Neuron Circuit with Nonvolatile Synapses Based on Magnetic-Tunnel-Junction for High-Speed Pattern Learning and Recognition”, 2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2015), Jeju Island, Korea, June 30, 2015. |
| 18 | Y. Ma and T. Endoh, “A High-Speed Pattern Matching Processor Employing Adaptive Nonlinear Similarity Evaluation for Visual-Attention-Based Object Recognition”, 2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2015), Jeju Island, Korea, June 29, 2015. |
| 17 | K. Itoh, M. Muraguchi and T. Endoh, “Switch Toggling Technique of Parallel MOSFET Topology for Power Electronics Circuits with Uniform Thermal Distribution”, 2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2015), Jeju Island, Korea, June 29, 2015. |
| 16 | T. Sasaki, M. Muraguchi, T. Shinada and T. Endoh, “A Study of Strain Profile in Channel Region of Vertical MOSFET for Improving Drivability”, 2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2015), Jeju Island, Korea, June 29, 2015. |
| 15 | M. Muraguchi and T. Endoh, “Channel Length Dependence of Electrostatic Lens Effect in Vertical Body Channel MOSFET”, 2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2015), Jeju Island, Korea, June 29, 2015. |
| 14 | T. Endoh, “MTJ based Non-Volatile Microcontroller and its MTJ/CMOS Hybrid Technology”, 1st ImPACT International Symposium on Spintronic Memory, Circuit and Storage , Tokyo, Japan, June 22, 2015. |
| 13 | T. Hanyu, “Design of an Ultra-Low Power Microcontroller Using Spintronics Technology”, 1st ImPACT International Symposium on Spintronic Memory, Circuit and Storage , Tokyo, Japan, June 21, 2015. |
| 12 | H. Sato, “CoFeB-MgO Magnetic tunnel junctions with perpendicular easy axis for low power consumption spintronics based VLSIs”, 1st ImPACT International Symposium on Spintronic Memory, Circuit and Storage , Tokyo, Japan, June 21, 2015. |
| 11 | T. Endoh, “MTJ based Non-Volatile Microcontroller and its MTJ/CMOS Hybrid Technology”, 1st ImPACT International Symposium on Spintronic Memory, Circuit and Storage , Tokyo, Japan, June 21, 2015. |
| 10 | H. Ohno, “Distributed IT system Project”, 1st ImPACT International Symposium on Spintronic Memory, Circuit and Storage , Tokyo, Japan, June 21, 2015. |
| 9 | H. Ohno, “Toward Ultra-low Power Microprocessor Using Spintronics Technology”, 1st ImPACT International Symposium on Spintronic Memory, Circuit and Storage , Tokyo, Japan, June 21, 2015. |
| 8 | H. Honjo, H. Sato, S. Ikeda, S. Sato, T. Watanebe, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, H. Koike, M. Muraguchi, M. Niwa, K. Ito, H. Ohno and T. Endoh, “10 nm φ perpendicular anisotropy CoFeB-MgO magnetic tunnel junction with over 400℃ high thermal tolerance by boron diffusion control”, 2015 Symposium on VLSI Technology, Kyoto, Japan, June 18, 2015. |
| 7 | D. Suzuki, M. Natsui, A. Mochizuki, S. Miura, H. Honjo, H. Sato, S. Fukami, S. Ikeda, T. Endoh, H. Ohno and T. Hanyu, “Fabrication of a 3000-6-Input-LUTs Embedded and Block-Level Power-Gated Nonvolatile FPGA Chip Using p-MTJ-Based Logic-in-Memory Structure”, 2015 Symposium on VLSI Circuits and Technology(VLSI Circuits 2015), Kyoto, Japan, June 18, 2015. |
| 6 | S. DuttaGupta, “Domain wall creep driven by adiabatic spin transfer torque in magnetic metals”, York-Tohoku-Kaiserslautern Symposium on New Concept Spintronics Devices, York, UK, June 11, 2015. |
| 5 | H. Koike, S. Miura, H. Honjo, T. Watanabe, H. Sato, S. Sato, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, M. Muraguchi, M. Niwa, K. Ito, S. Ikeda, H. Ohno, and T. Endoh, “1T1MTJ STT-MRAM Cell Array Design with an Adaptive Reference Voltage Generator for Improving Device Variation Tolerance”, International Memory Workshop (IMW), Monterey, CA, USA, May 2015 |
| 4 | T. Nakano, M. Oogane, H. Naganuma, and Y. Ando, “Systematic investigation on correlation between sensitivity and nonlinearity in magnetic tunnel junction for magnetic sensor”, IEEE International Magnetics Conference 2015 (INTERMAG2015), Beijing, China May 12, 2015. |
| 3 | T. Shinada, Y. Ohshima, and T. Endoh, “Creation of innovative integrated electronic technologies through international industry-academic consortium (CIES consortium) : From material/device/process to LSI/system”, 11th International Nanotechnology Conference on Communication and Cooperation (INC 11), Fukuoka, Japan, May 12, 2015. |
| 2 | S. Fukami, T. Anekawa, C. Zhang, H. Ohno, “Proposal and demonstration of a new spin-orbit torque induced switching device”, INTERMAG 2015, Beijing, China, May 12, 2015. |
| 1 | S. Sato, H. Honjo, S. Ikeda, H. Ohno, T. Endoh, and M. Niwa, “Diffusion Behavior on the Surface of CoFeB Film after the natural oxidation and annealing”, INTERMAG 2015, Beijing, China, May 15, 2015. |
