論文など

2016年度

学会発表

国際学会講演
32 C. Zhang, S. Fukami, H. Sato, F. Matsukura, and H. Ohno,
"Spin-orbit torque induced magnetization switching in nano-scale Ta/CoFeB/MgO dots",
The 2nd ImPACT International Symposium on Spintronic Memory, Circuit and Storage, Tsukuba, Japan, September 30, 2016.
31 D. Suzuki and T. Hanyu,
"Design of an MTJ-based nonvolatile flip-flop with high-sensitive self-terminated writing for a nonvolatile microcontroller unit",
The 2nd ImPACT International Symposium on Spintronic Memory, Circuit and Storage, Tsukuba, Japan, September 30, 2016.
30 H. Ohno, T. Endoh, T. Hanyu, and S. Ikeda,
"Overview of spintronic integrated circuit project",
The 2nd ImPACT International Symposium on Spintronic Memory, Circuit and Storage, Tsukuba, Japan, September 30, 2016.
29 H. Sato, S. Fukami, S. Ikeda, and H. Ohno,
"Two- and three-terminal devices for spintronics based integrated circuits",
The 2nd ImPACT International Symposium on Spintronic Memory, Circuit and Storage, Tsukuba, Japan, September 30, 2016.
28 M. Bersweiler, K. Watanabe, E. C. I. Enobio, H. Sato, S. Fukami, F. Matsukura, and H. Ohno,
"Magnetic properties of MgO/FeV/MgO and MgO/Fe/FeV/Fe/MgO structures for spintronics integrated circuits",
The 2nd ImPACT International Symposium on Spintronic Memory, Circuit and Storage, Tsukuba, Japan, September 30, 2016.
27 M. Natsui, A. Tamakoshi, T. Endoh, H. Ohno, and T. Hanyu,
"Design of an MTJ-based nonvolatile LSI for energy-efficient microcontroller unit",
The 2nd ImPACT International Symposium on Spintronic Memory, Circuit and Storage, Tsukuba, Japan, September 30, 2016.
26 Y. Ma, S. Miura, H. Honjo, S. Ikeda, T. Hanyu, H. Ohno and T. Endoh,
"A 600-μW ultra-low-power associative processor based on MTJ nonvolatile memories with autonomic intelligent power-gating scheme",
The 2nd ImPACT International Symposium on Spintronic Memory, Circuit and Storage, Tsukuba, Japan, September 30, 2016.
25 D. Suzuki and T. Hanyu,
"A Self-Terminated Energy-Efficient Nonvolatile Flip-Flop Using 3-terminal Magnetic Tunnel Junction Device",
2016 International Conference on Solid State Devices and Materials(SSDM2016), Tsukuba, Japan, September 28, 2016.
24 J. Igarashi, E. C. I. Enobio, J. Llandro, H. Sato, S. Fukami, F. Matsukura, and H. Ohno,
"Magnetic Field Angle Dependence of Switching Field in CoFeB-MgO Magnetic Tunnel Junctions with Perpendicular Easy Axis at Low Temperature",
2016 International Conference on Solid State Devices and Materials (SSDM2016), Tsukuba, Japan, September 28, 2016.
23 K. Itoh, M. Muraguchi and T. Endoh,
"Novel Integrated Voltage Regulators with High-Side NMOS Power Switch and Dedicated Bootstrap Driver Using Vertical MOSFET for Efficiency Enhancement",
2016 International Conference on Solid State Devices and Materials(SSDM2016), Tsukuba, Japan, September 28, 2016.
22 S. Ohuchida, K. Ito, M. Muraguchi and T. Endoh,
"New Model of Switching Delay Induced by Modulation Effect of　Damping and STT Pumping Balance With Programing Current and　Interference Phenomena in P-MTJ Array",
2016 International Conference on Solid State Devices and Materials(SSDM2016), Tsukuba, Japan, September 28, 2016.
21 M. Natsui, A. Tamakoshi, T. Endoh, H. Ohno, and T. Hanyu,
"Highly Reliable MTJ-Based Nonvolatile Logic-in-Memory LSI with Dynamic Write Error Masking Scheme",
2016 International Conference on Solid State Devices and Materials (SSDM2016), Tsukuba, Japan, September 27, 2016.
20 Y. Ma, S. Miura, H. Honjo, S. Ikeda, T. Hanyu, H. Ohno and T. Endoh,
"A Compact and Ultra-Low-Power STT-MRAM-Based Associative Memory for Nearest Neighbor Search with Full Adaptivity of Template Data Format Employing Current-Mode Similarity Evaluation and Time-Domain Minimum Searching",
2016 International Conference on Solid State Devices and Materials(SSDM2016), Tsukuba, Japan, September 27, 2016.
19 C. Zhang, S. Fukami, K. Watanabe, A. Ohkawara, S. DuttaGupta, H. Sato, F. Matsukura, and H. Ohno,
"Sputtering condition dependence of spin-orbit torque induced magnetization switching in W/CoFeB/MgO",
8th Joint European Magnetic Symposia (JEMS2016), Glasgow, UK, August 22, 2016.
18 A. Kurenkov, C. Zhang, S. DuttaGupta, S. Fukami, H. Ohno,
"Field-free switching of antiferromagnet/ferromagnet dots by spin-orbit torque",
9th International Conference on Physics and Applications of Spin-Related Phenomena in Solids (PASPS9), Kobe, Japan, August 9, 2016.
17 M. Shinozaki, E. Hirayama, S. Kanai, H. Sato, F. Matsukura, and H. Ohno,
"Damping constant of free layer in nanoscale magnetic tunnel junctionthrough domain structures",
9th International Conference on Physics and Applications of Spin-Related Phenomena in Solids (PASPS9), Kobe, Japan, August 8, 2016.
16 M. Bersweiler, K. Watanabe, E. C. I. Enobio, H. Sato, S. Fukami, F. Matsukura, and H. Ohno,
"High interfacial anisotropy and low Gilbert damping in MgO/Fe/Fe-V/Fe/MgO structure",
9th International Conference on Physics and Applications of Spin-Related Phenomena in Solids (PASPS9), Kobe, Japan, August 8, 2016.
15 T. Endoh,
“Overview of JSPS-EPSRC core-to-core project”,
JSPS Core-to-Core Kickoff Seminar, University of Cambridge, England, July 18,2016.
14 T. Endoh,
“Spintronics research on LSI”,
JSPS Core-to-Core Kickoff Seminar, University of Cambridge, England, July 18,2016.
13 M. Niwa,
“Physical Analysis of spintronics devices”,
JSPS Core-to-Core Kickoff Seminar, University of Cambridge, England, July 18,2016.
12 K. Ito,
“Spintronics device research based on LLG simulation”,
JSPS Core-to-Core Kickoff Seminar, University of Cambridge, England, July 18,2016.
11 K. Itoh, M. Muraguchi and T. Endoh,
“Novel inductor current to digital converter and its concept evaluation”,
2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, Hakodate, Japan, July 5, 2016.
10 Y. Ma, T. Endoh,
"Effect of MTJ Resistance Fluctuations on Synapse Stability of MTJ-Based Nonvolatile Neuron Circuit for High-Speed Object Recognition",
2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, Hakodate, Japan, July 5, 2016.
9 T. Nakano, M. Oogane, T. Furuichi, K. Ao, and Y. Ando
"Wide-dynamic-range magnetic sensor based on magnetic tunnel junction with perpen-dicularly magnetized [Co/Pd]-based reference layer"
3rd Workshop of the Core-to-Core Project, Germany, June 22, 2016.
8 D. Kato, M. Oogane, K. Fujiwara, Y. Arai, J. Jono, H. Naganuma, M. Tsuchida, and Y. Ando
"Magnetic Field Sensor Properties in Magnetic Tunnel Junctions with Amorphous CoFeSiB at Low Magnetic Field" 3rd Workshop of the Core-to-Core Project, Germany, June 22, 2016.
7 M. Shinozaki, E. Hirayama, S. Kanai, H. Sato, F. Matsukura, and H. Ohno
"Evaluation of damping constant in a nanoscale magnetic tunnel junction by homodyne-detected ferromagnetic resonance"
3rd Workshop of the Core-to-Core Project Tohoku-York-Kaiserslautern New concepts for future spintronic devices, Kaiserslautern, Germany, June 22, 2016.
6 S. Fukami, T. Anekawa, A. Ohkawara, C. Zhang, and H. Ohno
"A sub-ns three-terminal spin-orbit torque induced switching device"
2016 Symposium on VLSI Technology, Hawaii, USA, June14, 2016.
5 D. Suzuki and T. Hanyu
"Energy-Efficient and Highly-Reliable Nonvolatile FPGA Using Self-Terminated Power-Gating Scheme"
IEEE International Symposium on Multiple-Valued Logic (ISMVL 2016), Sapporo, Japan, May 18, 2016.
4 Y. Tabata, D. Suzuki, and T. Hanyu
"Design Automation of a Power-Aware Nonvolatile FPGA"
25th International　Workshop　on Post-Binary ULSI Systems, Sapporo, Japan, May 17, 2016.
3 W.Kawai, R. Ueno, N. Homma, T. Aoki, K. Fukushima, and S. Kiyomoto
"Side channel Security Evaluation for KCipher‐2 Software on Smart Cards"
25th International　Workshop　on Post-Binary ULSI Systems, Sapporo, Japan, May 17, 2016.
2 H. Koike, S. Miura, H. Honjo, T. Watanabe, H. Sato, S. Sato, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, M. Muraguchi, M. Niwa, K. Ito, S. Ikeda, H. Ohno, T. Endoh
"Demonstration of yield improvement for on-via MTJ using a 2-Mbit 1T-1MTJ STT-MRAM test chip"
8th International Memory Workshop, Paris, France, May 16, 2016.
1 T. Shinada, Y. Ohshima, T. Endoh
"International industry-academic consortium (CIES consortium) enhances creation of innovative integrated electronic technologies from material/process/LSI to sofware/tool/system"
International Nanotechnology Conference , Leuven, Belgium , May 10, 2016.
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